Titanium doped sapphire is the most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. Dream Lasers have successfully produced large-sized (φ120×80mm) Ti: sapphire free of light scatter and with dislocation density less than 102cm-2 by using the growth method of Temperature Gradient Technique (TGT). TGT is characterized by the capabilities of growing (001) oriented sapphire with high doping level (α490=7.5cm-1), high gain, and high laser damage threshold.

Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti: sapphire. Moreover, TGT grown Ti: sapphire can also meet current applications such as in large aperture amplifiers (diameter up to 50mm) for high power generation and laser fusion etc.

Physical Properties

Chemical Formula Ti3+: Al2O3
Crystal Structure Hexagonal
Unite Cell a=4.758, c=12.991
Density 3.98g/cm3
Hardness 9mols, 1525-2000Knoop
Melting Point 2040℃


Laser Properties

Laser Action 4-Level Vibronic
Absorption Band 400-600nm (peak at 490)
Tunable Range 660-1100nm (peak at 490)
Fluorescence Time 3.2μs
Peak Cross-section 3-4×10-19cm2
Refractive Index 1.76 (nominal)


Laser Rods Specificatio

Doped Level 0.06-0.5 at%Ti2Q3
FOM 100-300
Diameter 2-50mm or specified
Brewster’s Angle or Specified  
α490 7.5cm-1
Wavefront Distortion <l/8 at 633 nm
Surface quality 10/5 Scratch/Dig per MIL-O-13830B
Flatness l/10 at 633 nm